underside view p in 1 C base pin 2 C emitter pin 3 C collector npn power silicon transistor in a hermetically sealed metal package features ? v ceo = 75v ? i c = 7a applications: all semelab hermetically sealed products can be processed in accordance with the requirements of bs, cecc and jan, jantx, jantxv and jans specifications t0-66 (to-213aa) mechanical data dimensions in mm (inches) 2N3879 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5337 issue 1 absolute maximum ratings (t case = 25c unless otherwise stated) v ceo collector-emitter voltage (i b =0) 75v v cbo collector -base voltage (i e =0) 120v v ebo emitter-base voltage (i c =0) 7v i b continuous base current 5a i c continuous collector current 7a p d power dissipation tcase = 25c 35w t j ,t stg operating & storage temperature range -65 to +200c r jc thermal resistance junction to case 5 c/w 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
2N3879 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5337 issue 1 electrical characteristics (t case = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit v (br)ceo* collector-emitter breakdown voltage i c =0.2a 75 v i ceo* collector-emitter cut-off current v ce =50v 5.0 v i cex* collector-emitter cut-off current v ce =100v v be =1.5v 4.0 i cbo* collector-base cut-off current v cb =120v 25 i ebo* emitter-base cut-off current v eb =7v 10 ma i c =0.5a v ce =5v 40 i c =4a v ce =5v 20 80 h fe* dc current gain i c =4a v ce =2v 12 100 v ce(sat) * collector-emitter saturation voltage i c =4a i b =0.4a 1.2 v be(sat) * base-emitter saturation voltage i c =4a i b =0.4a 2.0 v be(on) * base-emitter saturation voltage i c =4a v ce =2v 1.8 v * pulse width < 300s, duty cycle <2% dynamic characteristics (t c a se = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit |h fe | small signal current gain (f=10mhz) i c =0.5a v ce =10v 4 20 c obo output capacitance (0.1 ` f ` 1mhz) i e =0a v cb =10v 175 pf semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. switching characteristics (t c a se = 25 c unless otherwise stated) parameter test conditions min. typ. max. unit i c =0.2a v cc =30v t on turn on time i b =0.4a 0.44 i c =0.2a v cc =30v t off turn off time i b =- i b =0.4a 1.22 s
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